Invention Grant
- Patent Title: Nitride crystal substrate
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Application No.: US16082598Application Date: 2017-03-01
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Publication No.: US10584031B2Publication Date: 2020-03-10
- Inventor: Takehiro Yoshida , Masatomo Shibata
- Applicant: SCIOCS COMPANY LIMITED , SUMITOMO CHEMICAL COMPANY, LIMITED
- Applicant Address: JP Ibaraki JP Tokyo
- Assignee: SCIOCS COMPANY LIMITED,SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee: SCIOCS COMPANY LIMITED,SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee Address: JP Ibaraki JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2016-044829 20160308
- International Application: PCT/JP2017/008140 WO 20170301
- International Announcement: WO2017/154701 WO 20170914
- Main IPC: B32B9/00
- IPC: B32B9/00 ; C01B21/06 ; C30B29/40 ; C30B25/20 ; C23C16/34 ; H01L29/20 ; H01L21/02
Abstract:
There is provided a nitride crystal substrate made of a nitride crystal with a diameter of 100 mm or more, having on its main surface: a continuous high dislocation density region and a plurality of low dislocation density regions divided by the high dislocation density region, with the main surface not including a polarity inversion domain.
Public/Granted literature
- US20190119112A1 NITRIDE CRYSTAL SUBSTRATE Public/Granted day:2019-04-25
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