Invention Grant
- Patent Title: Processes for producing III-N single crystals, and III-N single crystal
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Application No.: US15883125Application Date: 2018-01-30
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Publication No.: US10584427B2Publication Date: 2020-03-10
- Inventor: Marit Gründer , Frank Brunner , Eberhard Richter , Frank Habel , Markus Weyers
- Applicant: FREIBERGER COMPOUND MATERIALS GMBH
- Applicant Address: DE Freiberg
- Assignee: FREIBERGER COMPOUND MATERIALS GMBH
- Current Assignee: FREIBERGER COMPOUND MATERIALS GMBH
- Current Assignee Address: DE Freiberg
- Agency: A.C. Entis-IP Ltd.
- Agent Allan C. Entis; Kenichi N. Hartman
- Priority: DE102012204551 20120321; DE102012204553 20120321
- Main IPC: C30B25/16
- IPC: C30B25/16 ; C30B25/18 ; H01L21/02 ; C30B29/40 ; C30B25/10 ; C30B25/04 ; H01L29/20
Abstract:
The present invention relates to a III-N single crystal adhering to a substrate, wherein III denotes at least one element of the third main group of the periodic table of the elements, selected from the group of Al, Ga and In, wherein the III-N single crystal exhibits, within a temperature range of an epitaxial crystal growth, a value (i) of deformation εXX in the range of
Public/Granted literature
- US20180237944A1 PROCESSES FOR PRODUCING III-N SINGLE CRYSTALS, AND III-N SINGLE CRYSTAL Public/Granted day:2018-08-23
Information query
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