Invention Grant
- Patent Title: Selective reading of memory with improved accuracy
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Application No.: US15658066Application Date: 2017-07-24
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Publication No.: US10585735B2Publication Date: 2020-03-10
- Inventor: Wayne Kinney , Gurtej S. Sandhu
- Applicant: OVONYX MEMORY TECHNOLOGY, LLC
- Applicant Address: US VA Alexandria
- Assignee: OVONYX MEMORY TECHNOLOGY, LLC
- Current Assignee: OVONYX MEMORY TECHNOLOGY, LLC
- Current Assignee Address: US VA Alexandria
- Agency: Holland & Hart LLP
- Main IPC: G06F11/07
- IPC: G06F11/07 ; G11C11/16 ; G11C29/02 ; G11C29/04

Abstract:
This disclosure relates to selectively performing a read with increased accuracy, such as a self-reference read, from a memory. In one aspect, data is read from memory cells, such as magnetoresistive random access memory (MRAM) cells, of a memory array. In response to detecting a condition associated with reading from the memory cells, a self-reference read can be performed from at least one of the memory cells. For instance, the condition can indicate that data read from the memory cells is uncorrectable via decoding of error correction codes (ECC). Selectively performing self-reference reads can reduce power consumption and/or latency associated with reading from the memory compared to always performing self-reference reads.
Public/Granted literature
- US20170322840A1 SELECTIVE READING OF MEMORY WITH IMPROVED ACCURACY Public/Granted day:2017-11-09
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