Invention Grant
- Patent Title: Interface circuit for multi rank memory
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Application No.: US16211777Application Date: 2018-12-06
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Publication No.: US10586575B2Publication Date: 2020-03-10
- Inventor: Kwanyeob Chae , Hyungkweon Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2018-0003595 20180110; KR10-2018-0053348 20180509
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G06F13/16 ; H03K19/20

Abstract:
An electronic circuit including: a first delay line circuit to generate a first data strobe by delaying a second data strobe, such that an edge of the first data strobe is aligned within a first time interval; and a sampling circuit to sample the first data signal at the edge of the first data strobe, wherein plural data signals include the first data signal and a second data signal, wherein timings of the plural data signals deviate from a reference timing of a reference data strobe by plural time lengths, wherein the first data signal deviates from the reference timing by a first time length of the plural time lengths, and wherein an edge of the second data strobe is aligned within a second time interval, wherein a timing of the second data signal deviates from the reference timing by a shortest time length of the plural time lengths.
Public/Granted literature
- US20190214063A1 INTERFACE CIRCUIT FOR MULTI RANK MEMORY Public/Granted day:2019-07-11
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