To accurately read data in a storage device provided with a cell having a variable resistance value. In a reference cell circuit, a resistance value changes to a predetermined initial value when an initialization signal exceeding a predetermined reversal threshold is input. A reference side signal source inputs a reference side read signal of a predetermined value not exceeding the predetermined reversal threshold to the reference cell circuit after the initialization signal is input to the reference cell circuit when there is an instruction to read with respect to a memory cell. A cell side signal source inputs a cell side read signal of the predetermined value to the memory cell after the initialization signal is input. A comparison unit compares a reference signal output from the reference cell circuit into which the reference side read signal has been input, and a cell signal output from the memory cell into which the cell side read current has been input, and acquires the comparison result as read data.