According to one embodiment, semiconductor memory device includes a first circuit that determines data stored in a memory cell; and a second circuit that controls the first circuit, wherein in a sequence in which the second circuit writes first data in the memory cell, the first circuit generates a first current of a first current value, and determines data stored in the memory cell based on the first current and a second current flowing in the memory cell, and in a sequence in which the second circuit writes second data different from the first data in the memory cell, the first circuit generates a third current of a second current value different from the first current value, and determines data stored in the memory cell based on the third current and the second current.