Invention Grant
- Patent Title: High speed thin film two terminal resistive memory
-
Application No.: US15864179Application Date: 2018-01-08
-
Publication No.: US10586591B2Publication Date: 2020-03-10
- Inventor: Ning Li , Devendra Sadana
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Otterstedt, Wallace & Kammer, LLP
- Agent Daniel P. Morris
- Main IPC: G11C13/00
- IPC: G11C13/00 ; H01M2/16 ; H01M10/0585 ; H01M4/131 ; H01M10/0562 ; H01M4/525

Abstract:
A high speed thin film two terminal resistive memory article of manufacture comprises a chargeable and dischargeable variable resistance thin film battery having a plurality of layers operatively associated with one another, the plurality of layers comprising in sequence, a cathode-side conductive layer, a cathode layer comprised of a material that can take up cations and discharge cations in a charging and discharging process, an electrolyte layer comprising the cations, a barrier layer, an anode layer, and an optional anode-side conductive layer, the barrier layer comprised of a material that substantially prevents the cations from combining with the anode layer.
Public/Granted literature
- US20190214081A1 HIGH SPEED THIN FILM TWO TERMINAL RESISTIVE MEMORY Public/Granted day:2019-07-11
Information query