There are provided a memory device and an operating method thereof. A memory device may include a memory block, peripheral circuits, and a control logic. The memory block may include a plurality of memory cells. The peripheral circuits may perform a program operation on the memory cells. The control logic may control the peripheral circuits to apply, during the program operation, a program voltage to a selected word line and selectively apply, to one or more unselected word lines, a second pass voltage lower than a first pass voltage set as a default voltage during a blind program period which does not include a verify operation.