Invention Grant
- Patent Title: Etching method
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Application No.: US16118672Application Date: 2018-08-31
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Publication No.: US10586710B2Publication Date: 2020-03-10
- Inventor: Maju Tomura , Yoshihide Kihara , Masanobu Honda
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2017-168789 20170901; JP2018-039840 20180306; JP2018-161816 20180830
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/033 ; H01L21/687 ; H01L21/67 ; H01J37/32 ; H01L27/11582 ; H01L27/11556 ; H01L21/683
Abstract:
Provided is a method of etching a silicon-containing film made of at least one of silicon oxide and silicon nitride. The etching method includes: (i) preparing a workpiece having a silicon-containing film and a mask provided on the silicon-containing film in a chamber body of a plasma processing apparatus, in which an opening is formed in the mask; and (ii) etching the silicon-containing film, in which plasma is produced in the chamber body from processing gas containing fluorine, hydrogen, and iodine in order to etch the silicon-containing film, and a temperature of the workpiece is set to a temperature of 0° C. or less.
Public/Granted literature
- US20190074190A1 ETCHING METHOD Public/Granted day:2019-03-07
Information query
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