Invention Grant
- Patent Title: Semiconductor device, and method for manufacturing semiconductor device
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Application No.: US16238107Application Date: 2019-01-02
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Publication No.: US10586755B2Publication Date: 2020-03-10
- Inventor: Yuto Nishiyama
- Applicant: Rohm Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2018-004022 20180115; JP2018-044059 20180312
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/00 ; H01L21/48

Abstract:
A semiconductor device includes a first lead with a first block, a second lead with a second block, and a sealing resin partially covering the first and second leads. The first block is exposed from the sealing resin and has a first covered surface covered with an electroconductive layer, and a pair of first exposed surfaces spaced apart from each other via a part of the first covered surface. The second block is exposed from the sealing resin and has a second covered surface covered with an electroconductive layer, and a pair of second exposed surfaces spaced apart from each other via a part of the first covered surface.
Public/Granted literature
- US20190221504A1 SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2019-07-18
Information query
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