An One-Time Programmable (OTP) memory is built in at least one of nano-wire structures. The OTP memory has a plurality of OTP cells. At least one of the OTP cells can have at least one resistive element and at least one nano-wires. The at least one resistive element can be built by an extended source/drain or a MOS gate. The at least one nano-wires can be built on a common well or on an isolated structure that has at least one MOS gate dividing nano-wires into at least one first active region and a second active region.