Invention Grant
- Patent Title: Field effect transistor with controllable resistance
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Application No.: US16434711Application Date: 2019-06-07
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Publication No.: US10586849B2Publication Date: 2020-03-10
- Inventor: Yulong Li , Paul M. Solomon , Siyuranga Koswatta
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/06 ; H01L29/66 ; H01L29/68 ; H01L29/49 ; H01L29/205 ; H01L29/80 ; H01L27/11521 ; H01L27/1159 ; H01L29/51 ; H01L29/78 ; H01L21/28 ; H01L29/165 ; H01L27/108 ; H01L29/788 ; H01L27/24 ; H01L29/423
Abstract:
A method and resulting structures for a semiconductor device includes forming a source terminal of a semiconductor fin on a substrate. An energy barrier is formed on a surface of the source terminal. A channel is formed on a surface of the energy barrier, and a drain terminal is formed on a surface of the channel. The drain terminal and the channel are recessed on either sides of the channel, and the energy barrier is etched in recesses formed by the recessing. The source terminal is recessed using timed etching to remove a portion of the source terminal in the recesses formed by etching the energy barrier. A first bottom spacer is formed on a surface of the source terminal and a sidewall of the semiconductor fin, and a gate stack is formed on the surface of the first bottom spacer.
Public/Granted literature
- US20190312108A1 FIELD EFFECT TRANSISTOR WITH CONTROLLABLE RESISTANCE Public/Granted day:2019-10-10
Information query
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