Invention Grant
- Patent Title: Thin-film, flexible multi-junction optoelectronic devices incorporating lattice-matched dilute nitride junctions and methods of fabrication
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Application No.: US16011516Application Date: 2018-06-18
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Publication No.: US10586884B2Publication Date: 2020-03-10
- Inventor: Nikhil Jain , Brendan M. Kayes , Gang He
- Applicant: ALTA DEVICES, INC.
- Applicant Address: US CA Sunnyvale
- Assignee: ALTA DEVICES, INC.
- Current Assignee: ALTA DEVICES, INC.
- Current Assignee Address: US CA Sunnyvale
- Agency: Arent Fox LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/18 ; H01L31/0687 ; H01L31/0725 ; H01L31/0735 ; H01L31/0216 ; H01L33/00 ; H01L33/04 ; H01L31/0232 ; H01L21/02

Abstract:
A multi-junction optoelectronic device and method of fabrication are disclosed. In an aspect, the method includes forming a first p-n structure on a substrate, the first p-n structure including a semiconductor having a lattice constant that matches a lattice constant of the substrate; forming one or more additional p-n structures on the first p-n structure, each of the one or more additional p-n structures including a semiconductor having a lattice constant that matches the lattice constant of the substrate, the semiconductor of a last of the one or more additional p-n structures that is formed including a dilute nitride, and the multi-junction optoelectronic device including the first p-n structure and the one or more additional p-n structures; and separating the multi-junction optoelectronic device from the substrate. In some implementations, it is possible to have the dilute nitride followed by a group IV p-n structure.
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