Semiconductor element, semiconductor device, and method for manufacturing semiconductor element
Abstract:
A semiconductor light emitting element is provided. The semiconductor light emitting element has a semiconductor stack, an n-side conductor layer, a p-side conductor layer, a dielectric multilayered film, an n-side reflective layer and a p-side reflective layer, disposed in that order. The n-side and p-side reflective layers contain Ag as a major component and contain particles of at least one selected from an oxide, a nitride, and a carbide.
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