Invention Grant
- Patent Title: Semiconductor element, semiconductor device, and method for manufacturing semiconductor element
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Application No.: US15590458Application Date: 2017-05-09
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Publication No.: US10586896B2Publication Date: 2020-03-10
- Inventor: Shuji Shioji
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-shi
- Agency: Hunton Andrews Kurth LLP
- Priority: JP2016-095688 20160511
- Main IPC: H01L33/46
- IPC: H01L33/46 ; H01L33/48 ; H01L33/50 ; H01L33/40 ; H01L33/38

Abstract:
A semiconductor light emitting element is provided. The semiconductor light emitting element has a semiconductor stack, an n-side conductor layer, a p-side conductor layer, a dielectric multilayered film, an n-side reflective layer and a p-side reflective layer, disposed in that order. The n-side and p-side reflective layers contain Ag as a major component and contain particles of at least one selected from an oxide, a nitride, and a carbide.
Public/Granted literature
- US20170331009A1 SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT Public/Granted day:2017-11-16
Information query
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