Invention Grant
- Patent Title: Hall sensor device and hall sensing method
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Application No.: US15596017Application Date: 2017-05-16
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Publication No.: US10586915B2Publication Date: 2020-03-10
- Inventor: Udo Ausserlechner
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Harrity & Harrity, LLP
- Priority: DE102016109883 20160530
- Main IPC: G01R33/07
- IPC: G01R33/07 ; H01L43/04 ; H01L43/06

Abstract:
The present disclosure relates to 3-dimensional Hall sensor devices comprising a Hall sensor element having a Hall effect region implemented in a 3-dimensional shell and comprising at least three terminals. Each terminal is connected to at least one electrical contact of the Hall effect region and each electrical contact is disposed at a different region of the 3-dimensional shell. The present disclosure further discloses spinning current/voltage schemes for offset cancellation in such 3-dimensional Hall sensor devices.
Public/Granted literature
- US20170345997A1 HALL SENSOR DEVICE AND HALL SENSING METHOD Public/Granted day:2017-11-30
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