Invention Grant
- Patent Title: Forming self-aligned contacts on pillar structures
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Application No.: US16021195Application Date: 2018-06-28
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Publication No.: US10586920B2Publication Date: 2020-03-10
- Inventor: Anthony J. Annunziata , Daniel C. Edelstein , Eugene J. O'Sullivan , Henry K. Utomo
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/12 ; H01L43/08 ; H01L27/22 ; H01L45/00
Abstract:
A semiconductor structure is disclosed herein. The semiconductor structure includes two or more pillar structures disposed over a top surface of a substrate. The semiconductor structure further includes two or more contacts to the two or more pillar structures. The semiconductor structure further includes an insulator disposed between the two or more pillar structures and the two or more contacts. The two or more contacts are self-aligned to the two or more pillar structures.
Public/Granted literature
- US20180308897A1 FORMING SELF-ALIGNED CONTACTS ON PILLAR STRUCTURES Public/Granted day:2018-10-25
Information query
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