Invention Grant
- Patent Title: Power transistor with distributed gate
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Application No.: US14831742Application Date: 2015-08-20
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Publication No.: US10587194B2Publication Date: 2020-03-10
- Inventor: Daniel M. Kinzer
- Applicant: NAVITAS SEMICONDUCTOR INC.
- Applicant Address: US CA El Segundo
- Assignee: NAVITAS SEMICONDUCTOR, INC.
- Current Assignee: NAVITAS SEMICONDUCTOR, INC.
- Current Assignee Address: US CA El Segundo
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K3/00 ; H02M3/158 ; H02M1/088 ; H01L23/482 ; H02M1/096 ; H01L29/417 ; H01L29/778 ; H01L23/522 ; H01L23/528 ; H01L27/06 ; H01L29/872 ; H03K17/687 ; H01L29/861 ; H01L27/088 ; H01L29/20

Abstract:
An electronic circuit is disclosed. The electronic circuit includes a distributed power switch. In some embodiments, the electronic circuit also includes one or more of a distributed gate driver, a distributed gate pulldown device, a distributed diode, and a low resistance gate and/or source connection structure. An electronic component comprising the circuit, and methods of manufacturing the circuit are also disclosed.
Public/Granted literature
- US20160056721A1 POWER TRANSISTOR WITH DISTRIBUTED GATE Public/Granted day:2016-02-25
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