Invention Grant
- Patent Title: Semiconductor circuit and method of operating the circuit
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Application No.: US16212193Application Date: 2018-12-06
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Publication No.: US10587246B2Publication Date: 2020-03-10
- Inventor: Min-Su Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2012-0027387 20120316; KR10-2014-0031002 20140317
- Main IPC: H03K3/356
- IPC: H03K3/356 ; H03K3/012 ; G01R31/3185

Abstract:
Provided is a semiconductor circuit which includes a first circuit configured to determine a voltage level of a feedback node based on a voltage level of input data, a voltage level of a latch input node, and a voltage level of a clock signal, a second circuit configured to pre-charge the latch input node based on the voltage level of the clock signal, a third circuit configured to pull down the latch input node based on the voltage level of the feedback node and the voltage level of the clock signal, a latch configured to output output data based on the voltage level of the clock signal and the voltage level of the latch input node, and a control circuit included in at least one of the first to third circuits and the latch and configured to receive the control signal.
Public/Granted literature
- US20190109583A1 SEMICONDUCTOR CIRCUIT AND METHOD OF OPERATING THE CIRCUIT Public/Granted day:2019-04-11
Information query
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