Invention Grant
- Patent Title: Substrate processing apparatus, and method of manufacturing semiconductor device
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Application No.: US16555755Application Date: 2019-08-29
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Publication No.: US10590531B1Publication Date: 2020-03-17
- Inventor: Kenji Shirako , Tomoshi Taniyama
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kokusai Electric Corporation
- Current Assignee: Kokusai Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2018-165213 20180904
- Main IPC: H01L21/67
- IPC: H01L21/67 ; C23C16/44 ; C23C16/52 ; H01L21/673

Abstract:
There is provided a technique that includes: a first processing module including a first processing chamber for processing vertically arranged substrates; a second processing module including a second processing chamber for processing the substrates, the second processing chamber disposed adjacent to the first processing chamber; a first exhaust box storing a first exhaust system exhausting the first processing chamber; a second exhaust box storing a second exhaust system exhausting the second processing chamber; a common supply box controlling at least one of a flow path and a flow rate of process gases supplied into the first and second processing chambers; a first valve group connecting gas pipes from the common supply box to the first processing chamber such that a communication state is controllable; and a second valve group connecting the gas pipes from the common supply box to the second processing chamber such that a communication state is controllable.
Public/Granted literature
- US20200071821A1 SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2020-03-05
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