Invention Grant
- Patent Title: MEMS inertial sensor and forming method therefor
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Application No.: US15924789Application Date: 2018-03-19
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Publication No.: US10591508B2Publication Date: 2020-03-17
- Inventor: Lianjun Liu
- Applicant: MEMSEN ELECTRONICS INC
- Applicant Address: CN Nankai District, Tianjin
- Assignee: MEMSEN ELECTRONICS INC.
- Current Assignee: MEMSEN ELECTRONICS INC.
- Current Assignee Address: CN Nankai District, Tianjin
- Agency: Cantor Colburn LLP
- Priority: CN201110061571 20110315
- Main IPC: G01P15/125
- IPC: G01P15/125 ; G01C19/5769 ; B81C1/00 ; G01P15/18 ; G01P15/08

Abstract:
A method for forming an MEMS inertial sensor is provided, comprising: providing a first substrate having a first surface and a second surface, wherein providing the first substrate comprises providing a first base substrate and forming at least one conductive layer; providing a second substrate having a third surface and a fourth surface; bonding the first surface of the first substrate and the third surface of the second substrate together to form a first bonding interface; thinning the first base substrate from the second surface of the first substrate to remove part of the first base substrate; and forming a movable element of the MEMS inertial sensor, wherein the at least one conductive layer comprises a shielding layer, and the shielding layer is located between the first base substrate and the first bonding interface.
Public/Granted literature
- US20180210006A1 MEMS INERTIAL SENSOR AND FORMING METHOD THEREFOR Public/Granted day:2018-07-26
Information query
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