Invention Grant
- Patent Title: Particle detector made of a semiconductor material
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Application No.: US16302426Application Date: 2017-05-15
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Publication No.: US10591620B2Publication Date: 2020-03-17
- Inventor: Wilfried Vivian Roland Vervisch , Laurent Ottaviani , Stéphane Biondo , Vanessa Laurence Jill Hurtado Ep Vervisch
- Applicant: UNIVERSITÉ D'AIX MARSEILLE , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)
- Applicant Address: FR Marseilles FR Paris
- Assignee: UNIVERSITÉ D'AIX MARSEILLE,CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)
- Current Assignee: UNIVERSITÉ D'AIX MARSEILLE,CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)
- Current Assignee Address: FR Marseilles FR Paris
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Priority: FR1654382 20160517
- International Application: PCT/EP2017/061637 WO 20170515
- International Announcement: WO2017/198630 WO 20171123
- Main IPC: G01T1/29
- IPC: G01T1/29 ; G01T1/26

Abstract:
A system for measuring a particle beam includes a central and peripheral part and a front and back panel. The central part includes a system for producing a space charge zone to be passed through by a beam to be measured, charge carriers of a first and second type being generated by the beam when the latter passes through the space charge zone. The peripheral part includes a system for collecting at least one type of charge carrier from among the first or second type. The peripheral part surrounds the central part such that a particle beam can pass through the central part without passing through the peripheral part, an orifice being provided in back panel, in a region of the central part such that the thickness of the region, along a normal axis to the front panel is less than that of the peripheral part along the normal axis.
Public/Granted literature
- US20190277983A1 PARTICLE DETECTOR MADE OF A SEMICONDUCTOR MATERIAL Public/Granted day:2019-09-12
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