Invention Grant
- Patent Title: PMOS-output LDO with full spectrum PSR
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Application No.: US16161111Application Date: 2018-10-16
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Publication No.: US10591938B1Publication Date: 2020-03-17
- Inventor: Soheil Golara
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated
- Main IPC: G05F1/575
- IPC: G05F1/575 ; G05F1/59 ; G05F3/22 ; H03F3/45

Abstract:
A PMOS-output LDO with full spectrum PSR is disclosed. In one implementation, a LDO includes a pass transistor (MO) having a source coupled to an input voltage (Vin); a noise cancelling transistor (MD) having a source coupled to the Vin, a gate coupled to a drain and a gate of the pass transistor; a source follower transistor (MSF) having a source coupled to a drain of the pass transistor, a drain coupled to the drain and gate of the noise cancelling transistor; a current sink coupled between the drain of the source follower transistor and ground; and an error amplifier having an output to drive the gate of the source follower transistor.
Information query
IPC分类: