Invention Grant
- Patent Title: Backup mechanism of writing sequential data to single-level cell buffer and multi-level cell buffer
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Application No.: US16039740Application Date: 2018-07-19
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Publication No.: US10592410B2Publication Date: 2020-03-17
- Inventor: Wen-Sheng Lin , Yu-Da Chen
- Applicant: Silicon Motion, Inc.
- Applicant Address: TW Jhubei
- Assignee: Silicon Motion, Inc.
- Current Assignee: Silicon Motion, Inc.
- Current Assignee Address: TW Jhubei
- Agency: Wang Law Firm, Inc.
- Priority: TW106133362A 20170928
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F12/1009 ; G06F3/06 ; G06F11/07

Abstract:
A data storage device includes a memory device and a controller. The memory device includes a first buffer, a second buffer, and a backup memory block. The first buffer is an MLC block and the second buffer is an SLC block. The controller is coupled to the memory device, receives a write command to write predetermined data in the memory device and determines whether the predetermined data has to be written into different buffers. When the controller determines that the predetermined data has to be written into different buffers, the controller writes a portion of the predetermined data that has been written in one or more predetermined pages of the first buffer into the backup memory block.
Public/Granted literature
- US20190095321A1 Data Storage Device and Method for Writing Data into a Memory Device of a Data Storage Device Public/Granted day:2019-03-28
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