Invention Grant
- Patent Title: Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations
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Application No.: US16122773Application Date: 2018-09-05
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Publication No.: US10593396B2Publication Date: 2020-03-17
- Inventor: Michail Tzoufras , Marcin Gajek
- Applicant: SPIN MEMORY, Inc.
- Applicant Address: US CA Fremont
- Assignee: SPIN MEMORY, INC.
- Current Assignee: SPIN MEMORY, INC.
- Current Assignee Address: US CA Fremont
- Main IPC: G11C11/56
- IPC: G11C11/56 ; G11C11/16 ; H01L27/22 ; H01L43/02 ; H01L43/10
Abstract:
Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive programming parameter values can be selected to switch the state of a corresponding one of N cell elements of the MBC. Successive ones of the sensed state parameter values can be compared to determine N state change results, which can be used to determine the read state of the MBC.
Public/Granted literature
- US20200013456A1 MULTI-BIT CELL READ-OUT TECHNIQUES FOR MRAM CELLS WITH MIXED PINNED MAGNETIZATION ORIENTATIONS Public/Granted day:2020-01-09
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