Invention Grant
- Patent Title: Method and apparatus for logically removing defective pages in non-volatile memory storage device
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Application No.: US15365800Application Date: 2016-11-30
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Publication No.: US10593421B2Publication Date: 2020-03-17
- Inventor: Yiren Ronnie Huang
- Applicant: Yiren Ronnie Huang
- Applicant Address: US CA San Jose
- Assignee: CNEX Labs, Inc.
- Current Assignee: CNEX Labs, Inc.
- Current Assignee Address: US CA San Jose
- Agency: JW Law Group
- Agent James M Wu
- Main IPC: G11C29/44
- IPC: G11C29/44 ; G11C29/52 ; G11C29/40 ; G11C29/36 ; G11C29/38 ; G11C29/54 ; G11C29/04

Abstract:
One embodiment of the present invention capable of decommissioning a defective non-volatile memory (“NVM”) page in a block is disclosed. A process able to logically decommission a defective page is able to detect defective or bad pages while executing a write operation writing information to one or more NVM page in a NVM block. For example, after examining operation status after completion of the write operation, the NVM page is identified as a defective page if the operation status fails to meet a set of predefined conditions under a normal write operation. Upon marking a location of a page status table to indicate the NVM page as defective page, the page status table containing the page defective information associated with the NVM page is stored at a predefined page in the NVM block.
Public/Granted literature
- US20170154689A1 Method and Apparatus for Logically Removing Defective Pages in Non-Volatile Memory Storage Device Public/Granted day:2017-06-01
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