The present invention disclose an Electrostatic doping (ED)-based graphene nanoribbon (GNR) tunneling field-effect transistor (TFET) with tri-gate design. This device uses hydrogen-passivated GNR heterojunction as a carrier path way and functions as a power switch providing a switching speed of ˜0.3 ps−1 an ION/IOFF ratio as high as 1014 with the on-state current in the order of 103 μA/μm. This disclosed invention consists of two electrode, two electrode extensions, six metallic gate regions, and six dielectric regions.