Invention Grant
- Patent Title: Forming replacement low-K spacer in tight pitch fin field effect transistors
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Application No.: US15222261Application Date: 2016-07-28
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Publication No.: US10593780B2Publication Date: 2020-03-17
- Inventor: Xiuyu Cai , Chun-Chen Yeh , Qing Liu , Ruilong Xie
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES INC. , STMicroelectronics, Inc.
- Applicant Address: US NY Armonk KY Grand Cayman US TX Coppell
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.,STMICROELECTRONICS, INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.,STMICROELECTRONICS, INC.
- Current Assignee Address: US NY Armonk KY Grand Cayman US TX Coppell
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L29/78 ; H01L29/66 ; H01L29/417 ; H01L29/06 ; H01L29/08 ; H01L29/161 ; H01L29/165
Abstract:
A semiconductor device that a fin structure, and a gate structure present on a channel region of the fin structure. A composite spacer is present on a sidewall of the gate structure including an upper portion having a first dielectric constant, a lower portion having a second dielectric constant that is less than the first dielectric constant, and an etch barrier layer between sidewalls of the first and second portion of the composite spacer and the gate structure. The etch barrier layer may include an alloy including at least one of silicon, boron and carbon.
Public/Granted literature
- US20170103917A1 FORMING REPLACEMENT LOW-K SPACER IN TIGHT PITCH FIN FIELD EFFECT TRANSISTORS Public/Granted day:2017-04-13
Information query
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