Invention Grant
- Patent Title: Nitride semiconductor substrate and method for manufacturing the same
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Application No.: US15900202Application Date: 2018-02-20
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Publication No.: US10593790B2Publication Date: 2020-03-17
- Inventor: Yoshihisa Abe , Masashi Kobata , Shintaro Miyamoto
- Applicant: CoorsTek KK
- Applicant Address: JP Shinagawa-Ku, Tokyo
- Assignee: COORSTEK KK
- Current Assignee: COORSTEK KK
- Current Assignee Address: JP Shinagawa-Ku, Tokyo
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: JP2017-028846 20170220; JP2018-011099 20180126
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20 ; H01L29/24 ; H01L29/267 ; H01L23/31 ; H01L21/02 ; H01L29/205 ; H01L29/40 ; H01L29/66
Abstract:
A structure for increasing the concentration of two-dimensional electron gas without lowering mobility is provided. That is, a nitride semiconductor substrate is provided which includes a first layer, a second layer, and a third layer. The first layer has a composition of Ina1Alb1Gac1N (0≤a1≤1, 0≤b1≤1, 0≤c1≤1, a1+b1+c1=1). The second layer is formed on the first layer. The second layer has a composition of Ina2Alb2Gac2N (0≤a2≤1, 0≤b2≤1, 0≤c2≤1, a2+b2+c2=1) and has a band gap different from that of the first layer. The third layer is formed on the second layer and has a composition of AjB1-jN (A is a group 13 element, B is a group 13 element or a group 14 element, A≠B, 0
Public/Granted literature
- US20180240903A1 NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2018-08-23
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