Invention Grant
- Patent Title: Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystals
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Application No.: US15691912Application Date: 2017-08-31
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Publication No.: US10594111B2Publication Date: 2020-03-17
- Inventor: Charles Caër , Lukas Czornomaz
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Michael A. Petrocelli
- Main IPC: H01S5/10
- IPC: H01S5/10 ; H01S5/343 ; H01S5/30 ; H01S5/022 ; H01S5/024 ; H01S5/042 ; H01S5/02 ; H01S5/026 ; H01S5/50

Abstract:
A lateral current injection electro-optical device includes a slab having a pair of structured, doped layers of III-V semiconductor materials arranged side-by-side in the slab, the pair including an n-doped layer and a p-doped layer, each of the p-doped layer and the n-doped layer includes a two-dimensional photonic crystal, and a separation section extending between the pair of structured layers, the separation section separates the pair of structured layers, the separation section includes current blocking trenches, and an active region of III-V semiconductor gain materials between the current blocking trenches that form a photonic crystal cavity.
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