Invention Grant
- Patent Title: Storage device having dual access procedures
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Application No.: US15253692Application Date: 2016-08-31
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Publication No.: US10599333B2Publication Date: 2020-03-24
- Inventor: Daisuke Hashimoto
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F12/02

Abstract:
A storage device includes a nonvolatile semiconductor memory device, and a controller configured to access the nonvolatile semiconductor memory device. When the controller receives a write command including a logical address, the controller determines a physical location of the memory device in which data are written and stores a mapping from the logical address to the physical location. When the controller receives a write command without a logical address, the controller determines a physical location of the memory device in which data are written and returns the physical location.
Public/Granted literature
- US20170262177A1 STORAGE DEVICE HAVING DUAL ACCESS PROCEDURES Public/Granted day:2017-09-14
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