Invention Grant
- Patent Title: Nonvolatile memory device configured to be accessed without block address and method of operating the same
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Application No.: US15984445Application Date: 2018-05-21
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Publication No.: US10599562B2Publication Date: 2020-03-24
- Inventor: Ohchul Kwon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2017-0141245 20171027
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F11/10 ; G11C11/56 ; G06F3/06 ; G11C16/08 ; G11C16/04

Abstract:
A nonvolatile memory device includes multiple memory blocks. A first memory block stores first data. A reference memory block stores an indicator indicating the first memory block as an indication in response to a first direct access command received from the outside. A first physical area of the first memory block is accessed according to a page address received from the outside together with the first direct access command, and the indication of the indicator.
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