Invention Grant
- Patent Title: Semiconductor circuit design device
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Application No.: US15839483Application Date: 2017-12-12
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Publication No.: US10599801B2Publication Date: 2020-03-24
- Inventor: Takashi Kawano
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2016-244092 20161216
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A logic model of a nonvolatile memory device is commonly used in high order synthesis and a logic simulation. Further, the logic model of the nonvolatile memory device divides a one-time rewriting request area of the nonvolatile memory device into a plurality of areas, and rewrites each of the divided areas in a time division manner.
Public/Granted literature
- US20180173819A1 SEMICONDUCTOR CIRCUIT DESIGN DEVICE Public/Granted day:2018-06-21
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