The present disclosure relates to a semiconductor storage device, a driving method, and an electronic device capable of suppressing a layout area and improving reliability. A semiconductor storage device is provided with one or more selection transistors, a resistance change element one end of which is connected to a bit line and the other end of which is connected to a drain terminal of a selection transistor, the resistance change element a resistance value of which changes by a current of a predetermined value or larger allowed to flow, and a write control unit connected to a connection point between the selection transistor and the resistance change element and controls the current flowing through the resistance change element when data is written in the resistance change element. The present technology is applicable to, for example, a non-volatile memory provided with a storage element configured by a magnetic tunnel junction.