A magnetic storage device includes a first wire extending along a first direction and a plurality of spin orbit torque magnetic random access memory (SOT-MRAM) devices. Each of the plurality of SOT-MRAM devices is disposed at a respective position along the first wire. The magnetic storage device further includes write circuitry, including: a first transistor coupled to the first wire to apply a first write current along the first wire in the first direction; and a second transistor to select an individual SOT-MRAM device and apply a second write current to the individual SOT-MRAM device concurrently with the application of the first write current. The second write current is along an axis of the individual SOT-MRAM device. The magnetic storage device further includes readout circuitry to read a data value stored by the individual SOT-MRAM device.