Invention Grant
- Patent Title: Inductor structure
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Application No.: US15861978Application Date: 2018-01-04
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Publication No.: US10600556B2Publication Date: 2020-03-24
- Inventor: Chia-Shen Liu
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01F27/28
- IPC: H01F27/28 ; H01F27/29 ; H01L49/02 ; H01F27/34 ; H01F17/00

Abstract:
An inductor structure formed on a substrate and extending in a quadrant comprising a first domain, a second domain, a third domain and a fourth domain is provided. The inductor structure comprises an input conducting wire, an output conducting wire and a conducting wire. The conducting wire is coupled between the input conducting wire and the output conducting wire. A first portion of the conducting wire is extended from a start terminal, to the second domain, to the fourth domain, to a stop terminal. A second portion of the conducting wire is extended from the start terminal, to the third domain, to the first domain, to the stop terminal.
Public/Granted literature
- US20190206609A1 INDUCTOR STRUCTURE Public/Granted day:2019-07-04
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