Invention Grant
- Patent Title: Silicon germanium selective oxidation process
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Application No.: US16029281Application Date: 2018-07-06
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Publication No.: US10600641B2Publication Date: 2020-03-24
- Inventor: Agus Sofian Tjandra
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: H01L21/321
- IPC: H01L21/321 ; H01L21/02 ; H01J37/32
Abstract:
Implementations described herein relate to selective oxidation processes for semiconductor device manufacturing. In one implementation, the process includes delivering a substrate having a semiconductor device comprising at least a silicon material and a silicon germanium material formed thereon to a process chamber. Process variables are determined based upon the germanium concentration of the silicon germanium material and a desired oxide thickness and a selective oxidation process is performed utilizing the determined process variables.
Public/Granted literature
- US20190006175A1 SILICON GERMANIUM SELECTIVE OXIDATION PROCESS Public/Granted day:2019-01-03
Information query
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