Silicon carbide substrate heating
Abstract:
A system and method for heating silicon carbide substrates is disclosed. The system includes a heating element that utilizes LEDs that emit light at wavelengths between 600 nm and 650 nm. This wavelength is better absorbed by silicon carbide. In certain embodiments, collimating optics are disposed between the LEDs and the silicon carbide substrate. The collimating optics may increase the allowable distance between the LEDs and the substrate. In other embodiments, a diffuser is disposed between the LEDs and the substrate. In addition, a method of heating a substrate is disclosed. The relationship between absorption coefficient and wavelength is determined for the substrate. Based on this relationship, an optimal wavelength or range of wavelengths is selected. The substrate is then heated using an LED emitting light at the optimal wavelengths.
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