Invention Grant
- Patent Title: Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
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Application No.: US15879018Application Date: 2018-01-24
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Publication No.: US10600676B2Publication Date: 2020-03-24
- Inventor: Keiji Ishibashi , Akihiro Hachigo , Yuki Hiromura , Naoki Matsumoto , Seiji Nakahata , Fumitake Nakanishi , Takuya Yanagisawa , Koji Uematsu , Yuki Seki , Yoshiyuki Yamamoto , Yusuke Yoshizumi , Hidenori Mikami
- Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Applicant Address: JP Osaka-shi, Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka-shi, Osaka
- Agency: Faegre Drinker Biddle & Reath LLP
- Priority: JP2012-226777 20121012; JP2012-263090 20121130; JP2013-029114 20130218; JP2013-029115 20130218; JP2013-029125 20130218; JP2013-179839 20130830
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/306 ; H01L21/683 ; H01L21/762 ; B32B7/02 ; B32B7/04 ; H01L29/20 ; B32B7/06 ; H01L33/02 ; H01L33/00
Abstract:
Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 μm or more. A sheet resistance of a group III-nitride-film-side main surface is 200 Ω/sq or less.
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