Invention Grant
- Patent Title: IC unit and method of manufacturing the same, and electronic device including the same
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Application No.: US16421009Application Date: 2019-05-23
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Publication No.: US10600696B2Publication Date: 2020-03-24
- Inventor: Huilong Zhu , Zhengyong Zhu
- Applicant: Institute of Microelectronics, Chinese Academy of Sciences
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Schwegman Lundberg & Woessner, P.A.
- Priority: CN201610872541 20160930; CN201710530751 20170630
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/8234 ; H01L29/06 ; H01L29/417 ; H01L29/66 ; H01L21/3065 ; B82Y10/00 ; H01L29/267 ; H01L29/775 ; H01L29/786 ; H01L21/02 ; H01L29/04 ; H01L29/165 ; H01L29/423 ; H01L29/78 ; H01L21/225 ; H01L21/324 ; H01L29/08 ; H01L29/10 ; H01L29/15 ; H01L29/205 ; H01L29/45 ; H01L29/778 ; H01L21/308 ; H01L21/822 ; H01L27/092 ; H01L21/3105
Abstract:
There are provided an Integrated Circuit (IC) unit, a method of manufacturing the same, and an electronic device including the IC unit. According to an embodiment, the IC unit includes a first source/drain layer, a channel layer and a second source/drain layer for a first device and a first source/drain layer, a channel layer and a second source/drain layer for a second device stacked in sequence on a substrate. In the first device, the channel layer includes a first portion and a second portion separated from each other. The first source/rain layer and the second source/drain layer each extend integrally to overlap both the first portion and the second portion of the channel layer. The IC unit further includes a first gate stack surrounding a periphery of the first portion and also a periphery of the second portion of the channel layer of the first device, and a second gate stack surrounding a periphery of the channel layer of the second device.
Public/Granted literature
- US20190287865A1 IC UNIT AND METHOND OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME Public/Granted day:2019-09-19
Information query
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