Invention Grant
- Patent Title: Test structure and manufacturing method therefor
-
Application No.: US15995301Application Date: 2018-06-01
-
Publication No.: US10600700B2Publication Date: 2020-03-24
- Inventor: YiPing Mao , GuangNing Li
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: Semiconductor Manufacturing (Shanghai) International Corporation,Semiconductor Manufacturing (Beijing) International Corporation
- Current Assignee: Semiconductor Manufacturing (Shanghai) International Corporation,Semiconductor Manufacturing (Beijing) International Corporation
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Brinks Gilson & Lione
- Priority: CN201710778403 20170901
- Main IPC: H01L21/66
- IPC: H01L21/66 ; B81C1/00 ; G01R31/28 ; B81B7/00 ; H01L23/00 ; B81C3/00 ; B81B7/02 ; G01R31/26

Abstract:
This application relates to the field of semiconductor technologies, and discloses a test structure and a manufacturing method therefor. Forms of the method may include: providing a top wafer structure, where the top wafer structure includes a top wafer and multiple first pads that are spaced from each other at a bottom of the top wafer; providing a bottom wafer structure, where the bottom wafer structure includes a bottom wafer and multiple second pads that are spaced from each other at a top of the bottom wafer, where a side surface of at least one of two adjacent second pads has an insulation layer; bonding the multiple first pads with the multiple second pads in a eutectic bonding manner, where each first pad is bonded with a second pad, to form multiple pads. This application may mitigate a problem that bonded pads are connected to each other.
Public/Granted literature
- US20190074232A1 TEST STRUCTURE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2019-03-07
Information query
IPC分类: