Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16068878Application Date: 2016-01-21
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Publication No.: US10600738B2Publication Date: 2020-03-24
- Inventor: Manami Noda , Kota Kimura
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2016/051711 WO 20160121
- International Announcement: WO2017/126084 WO 20170727
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/535 ; H01L29/66 ; H01L29/423 ; H01L29/16 ; H01L29/417 ; H01L29/78 ; H01L23/29 ; H01L29/739
Abstract:
A gate electrode is formed in a trench formed in a semiconductor substrate. A gate interlayer insulating film is formed to cover the gate electrode and the like. A gate interconnection and an emitter electrode are formed in contact with the gate interlayer insulating film. A glass coating film and a polyimide film are formed to cover the gate interconnection and the emitter electrode. A solder layer is formed to cover the polyimide film. The gate interconnection and the emitter electrode are each formed of a tungsten film, for example.
Public/Granted literature
- US20190027440A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-01-24
Information query
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