Invention Grant
- Patent Title: Semiconductor power module
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Application No.: US16301544Application Date: 2017-05-31
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Publication No.: US10600764B2Publication Date: 2020-03-24
- Inventor: Kenji Hayashi , Masashi Hayashiguchi
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2016-110383 20160601
- International Application: PCT/JP2017/020303 WO 20170531
- International Announcement: WO2017/209191 WO 20171207
- Main IPC: H01L25/07
- IPC: H01L25/07 ; H01L23/36 ; H01L23/488 ; H01L23/00 ; H01L25/18 ; H02M7/48

Abstract:
A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at another surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.
Public/Granted literature
- US20190295990A1 SEMICONDUCTOR POWER MODULE Public/Granted day:2019-09-26
Information query
IPC分类: