An electrostatic discharge protection device includes: a semiconductor substrate; an N-type doped well on the substrate, the N-type doped well including a first N+ region and a first P+ region; a P-type doped well on the substrate, the P-type doped well including a second N+ region, a third N+ region, and a second P+ region between the second N+ region and the third N+ region; and a first contact positioned above a surface of the N-type doped well between the first N+ region and the first P+ region.