A semiconductor device may include a semiconductor substrate. A semiconductor substrate may include a diode region and an IGBT region provided adjacent to the diode region. The IGBT region may include a plurality of first conductive-type low concentration regions provided between a buffer region and a collector region, arranged with intervals therebetween in a direction parallel to the semiconductor substrate, and having a lower impurity concentration than the collector region. The collector region may include a first contact portion that is in contact with the buffer region between the low concentration regions adjacent to each other.