Invention Grant
- Patent Title: Manufacturing method of non-volatile memory structure
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Application No.: US16595504Application Date: 2019-10-08
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Publication No.: US10600798B2Publication Date: 2020-03-24
- Inventor: Zih-Song Wang
- Applicant: Powerchip Semiconductor Manufacturing Corporation
- Applicant Address: TW Hsinchu
- Assignee: Powerchip Semiconductor Manufacturing Corporation
- Current Assignee: Powerchip Semiconductor Manufacturing Corporation
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: TW107100263A 20180104
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L27/11519 ; H01L27/11582 ; H01L27/1157 ; H01L21/765 ; H01L23/552
Abstract:
A manufacturing method of a non-volatile memory structure including the following steps is provided. Memory cells are formed on a substrate. An isolation layer is formed between the memory cells. A shield electrode is formed on the isolation layer. The shield electrode is electrically connected to a source line.
Public/Granted literature
- US20200035698A1 MANUFACTURING METHOD OF NON-VOLATILE MEMORY STRUCTURE Public/Granted day:2020-01-30
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