Invention Grant
- Patent Title: Semiconductor device and method of manufacturing thereof
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Application No.: US15118575Application Date: 2015-04-15
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Publication No.: US10600838B2Publication Date: 2020-03-24
- Inventor: Satoru Wakiyama , Naoki Jyo , Kan Shimizu , Toshihiko Hayashi , Takuya Nakamura
- Applicant: SONY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Sheridan Ross P.C.
- Priority: JP2014-088804 20140423; JP2014-256186 20141218
- International Application: PCT/JP2015/002071 WO 20150415
- International Announcement: WO2015/162872 WO 20151029
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L23/00 ; H01L23/31 ; H01L23/48
Abstract:
There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.
Public/Granted literature
- US20170053960A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF Public/Granted day:2017-02-23
Information query
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