Invention Grant
- Patent Title: Fingerprint sensors and fabrication methods thereof
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Application No.: US16044373Application Date: 2018-07-24
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Publication No.: US10600861B2Publication Date: 2020-03-24
- Inventor: Fu Gang Chen
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: CN201710611417 20170725
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L23/522 ; H01L27/06 ; G06K9/00

Abstract:
A method for fabricating a fingerprint sensor includes providing a base substrate including a plurality of pixel regions, forming a sensing dielectric structure on the base substrate in the plurality of pixel regions, and forming a sensing connection structure in the sensing dielectric structure. The sensing dielectric structure exposes the sensing connection structure, and the sensing connection structure is connected to the base substrate. The method also includes forming a plurality of electrode plates on surfaces of the sensing dielectric structure and the sensing connection structure, forming a plurality of protrusions on surfaces of the electrode plates by performing a bulging treatment process on the plurality of electrode plates, and forming an insulation medium structure on the plurality of electrode plates.
Public/Granted literature
- US20190035879A1 FINGERPRINT SENSORS AND FABRICATION METHODS THEREOF Public/Granted day:2019-01-31
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