Invention Grant
- Patent Title: Semiconductor device having an emitter region and a contact region inside a mesa portion
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Application No.: US15959295Application Date: 2018-04-23
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Publication No.: US10600867B2Publication Date: 2020-03-24
- Inventor: Tatsuya Naito
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JP2017-097284 20170516; JP2018-005958 20180117
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/08 ; H01L29/732 ; H01L29/417 ; H01L29/66 ; H01L29/739 ; H01L29/423 ; H01L29/40 ; H01L29/06
Abstract:
A semiconductor device includes: a gate trench portion and a dummy trench portion provided extending in a predetermined direction of extension at the upper surface of the semiconductor substrate; a mesa portion sandwiched by the gate trench portion and the dummy trench portion; an emitter region provided between the upper surface of the semiconductor substrate and the drift region and provided at an upper surface of the mesa portion and adjacent to the gate trench portion; and a contact region provided between the upper surface of the semiconductor substrate and the drift region and provided at the upper surface of the mesa portion and adjacent to the dummy trench portion.
Public/Granted literature
- US20180337233A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-11-22
Information query
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