Invention Grant
- Patent Title: FinFET gate cut after dummy gate removal
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Application No.: US16244493Application Date: 2019-01-10
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Publication No.: US10600868B2Publication Date: 2020-03-24
- Inventor: John R. Sporre , Siva Kanakasabapathy , Andrew M. Greene , Jeffrey Shearer , Nicole A. Saulnier
- Applicant: TESSERA, INC.
- Applicant Address: US CA San Jose
- Assignee: Tessera, Inc.
- Current Assignee: Tessera, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L25/065 ; H01L29/78 ; H01L21/8234 ; H01L21/02 ; H01L29/66 ; H01L27/088 ; H01L21/8238 ; H01L27/092 ; H01L29/417
Abstract:
Semiconductor devices include a first semiconductor fin. A first gate stack is formed over the first semiconductor fin. Source and drain regions are formed on respective sides of the first gate stack. An interlayer dielectric is formed around the first gate stack. A gate cut plug is formed from a dielectric material at an end of the first gate stack.
Public/Granted literature
- US20190189517A1 FINFET GATE CUT AFTER DUMMY GATE REMOVAL Public/Granted day:2019-06-20
Information query
IPC分类:
