Invention Grant
- Patent Title: Semiconductor structure with a silicon germanium alloy fin and silicon germanium alloy pad structure
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Application No.: US15683310Application Date: 2017-08-22
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Publication No.: US10600870B2Publication Date: 2020-03-24
- Inventor: Kangguo Cheng , Pouya Hashemi , Ali Khakifirooz , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/66 ; H01L29/78 ; H01L29/161 ; H01L21/02 ; H01L21/308
Abstract:
A semiconductor structure is provided that includes a silicon germanium alloy fin having a second germanium content located on a first portion of a substrate. The structure further includes a laterally graded silicon germanium alloy material portion located on a second portion of the substrate. The laterally graded silicon germanium alloy material portion is spaced apart from the silicon germanium alloy fin and has end portions having the second germanium content and a middle portion located between the end portions that has a first germanium content that is less than the second germanium content.
Public/Granted literature
- US20170352729A1 SEMICONDUCTOR STRUCTURE WITH A SILICON GERMANIUM ALLOY FIN AND SILICON GERMANIUM ALLOY PAD STRUCTURE Public/Granted day:2017-12-07
Information query
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